Improvement of Charge Injection Using Ferroelectric Si:HfO2 As Blocking Layer in MONOS Charge Trapping Memory

Nb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications

Ga2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications

The charge-trapping characteristics of Ga2O3 (Gd2O3 ) (denoted as GGO) with and without nitrogen incorporation were investigated based on Al/Al2O3 / GGO/SiO2 /Si (metalalumina-nitride-oxide-silicon) capacitors. Compared with the capacitor without nitrogen incorporation, the one with nitrided GGO showed a larger memory window (10 V at ±16 V, 1 s), a higher program speed with a low gate voltage (...

Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications

Extrinsic and intrinsic charge trapping at the graphene/ferroelectric interface.

The interface between graphene and the ferroelectric superlattice PbTiO3/SrTiO3 (PTO/STO) is studied. Tuning the transition temperature through the PTO/STO volume fraction minimizes the adorbates at the graphene/ferroelectric interface, allowing robust ferroelectric hysteresis to be demonstrated. "Intrinsic" charge traps from the ferroelectric surface defects can adversely affect the graphene c...

Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

Non-volatile memories-providing the information storage functionality-are crucial circuit components. Solution-processed organic ferroelectric memory diodes are the non-volatile memory candidate for flexible electronics, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory fabricated on a plastic foil. Further progress, however, is limited owing to the lack of understa...